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IPP08CN10L G


Part Number IPP08CN10L G
Zouser Part # IPP08CN10L-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 98A TO220-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP08CN10L G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock280 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

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IPP08CN10L G Specifications

Part Number IPP08CN10L G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 98A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 98A, 10V
Vgs(th) (Max) @ Id 2.4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 8610pF @ 50V
FET Feature -
Power Dissipation (Max) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP08CN10L G Documents

IPP08CN10L G, IPP08CN10L G Datasheet (Total Pages: 9, Size: 260.09 KB)
IPP08CN10L G Datasheet CoverIPP08CN10L G Datasheet Page 2IPP08CN10L G Datasheet Page 3IPP08CN10L G Datasheet Page 4IPP08CN10L G Datasheet Page 5IPP08CN10L G Datasheet Page 6IPP08CN10L G Datasheet Page 7IPP08CN10L G Datasheet Page 8IPP08CN10L G Datasheet Page 9

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