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IPP16CNE8N G


Part Number IPP16CNE8N G
Zouser Part # IPP16CNE8N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 85V 53A TO-220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPP16CNE8N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock284 - More on Order
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IPP16CNE8N G Specifications

Part Number IPP16CNE8N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 85V
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 53A, 10V
Vgs(th) (Max) @ Id 4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3230pF @ 40V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3

IPP16CNE8N G Documents

IPP16CNE8N G, IPP16CNE8N G Datasheet (Total Pages: 12, Size: 493.14 KB)
IPI16CNE8N G Datasheet CoverIPI16CNE8N G Datasheet Page 2IPI16CNE8N G Datasheet Page 3IPI16CNE8N G Datasheet Page 4IPI16CNE8N G Datasheet Page 5IPI16CNE8N G Datasheet Page 6IPI16CNE8N G Datasheet Page 7IPI16CNE8N G Datasheet Page 8IPI16CNE8N G Datasheet Page 9IPI16CNE8N G Datasheet Page 10IPI16CNE8N G Datasheet Page 11IPI16CNE8N G Datasheet Page 12

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