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IPS10N03LA G
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IPS10N03LA G


Part Number IPS10N03LA G
Zouser Part # IPS10N03LA-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 30A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPS10N03LA G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock653 - More on Order
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IPS10N03LA G Specifications

Part Number IPS10N03LA G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 11nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1358pF @ 15V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPS10N03LA G Documents

IPS10N03LA G, IPS10N03LA G Datasheet (Total Pages: 12, Size: 539.19 KB)
IPU10N03LA G Datasheet CoverIPU10N03LA G Datasheet Page 2IPU10N03LA G Datasheet Page 3IPU10N03LA G Datasheet Page 4IPU10N03LA G Datasheet Page 5IPU10N03LA G Datasheet Page 6IPU10N03LA G Datasheet Page 7IPU10N03LA G Datasheet Page 8IPU10N03LA G Datasheet Page 9IPU10N03LA G Datasheet Page 10IPU10N03LA G Datasheet Page 11IPU10N03LA G Datasheet Page 12

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