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IPS118N10N G


Part Number IPS118N10N G
Zouser Part # IPS118N10N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 75A TO251-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPS118N10N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock432 - More on Order
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Lead-TimeTo be Confirmed
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IPS118N10N G Specifications

Part Number IPS118N10N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.8mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4320pF @ 50V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPS118N10N G Documents

IPS118N10N G, IPS118N10N G Datasheet (Total Pages: 9, Size: 570.37 KB)
IPS118N10N G Datasheet CoverIPS118N10N G Datasheet Page 2IPS118N10N G Datasheet Page 3IPS118N10N G Datasheet Page 4IPS118N10N G Datasheet Page 5IPS118N10N G Datasheet Page 6IPS118N10N G Datasheet Page 7IPS118N10N G Datasheet Page 8IPS118N10N G Datasheet Page 9

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