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IPS12CN10LGBKMA1


Part Number IPS12CN10LGBKMA1
Zouser Part # IPS12CN10LGBKMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 69A TO251-3-11
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPS12CN10LGBKMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock222 - More on Order
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IPS12CN10LGBKMA1 Specifications

Part Number IPS12CN10LGBKMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.8mOhm @ 69A, 10V
Vgs(th) (Max) @ Id 2.4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 50V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPS12CN10LGBKMA1 Documents

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