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IPU04N03LB G


Part Number IPU04N03LB G
Zouser Part # IPU04N03LB-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 50A IPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPU04N03LB G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock537 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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Qty.Unit PriceExt. Price
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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

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IPU04N03LB G Specifications

Part Number IPU04N03LB G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 15V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package P-TO251-3-1
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

IPU04N03LB G Documents

IPU04N03LB G, IPU04N03LB G Datasheet (Total Pages: 12, Size: 521.29 KB)
IPU04N03LB G Datasheet CoverIPU04N03LB G Datasheet Page 2IPU04N03LB G Datasheet Page 3IPU04N03LB G Datasheet Page 4IPU04N03LB G Datasheet Page 5IPU04N03LB G Datasheet Page 6IPU04N03LB G Datasheet Page 7IPU04N03LB G Datasheet Page 8IPU04N03LB G Datasheet Page 9IPU04N03LB G Datasheet Page 10IPU04N03LB G Datasheet Page 11IPU04N03LB G Datasheet Page 12

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