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IPU64CN10N G


Part Number IPU64CN10N G
Zouser Part # IPU64CN10N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 17A TO251-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPU64CN10N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock551 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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100$ 0.0000$ 0.0000
500$ 0.0000$ 0.0000
1000$ 0.0000$ 0.0000

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IPU64CN10N G Specifications

Part Number IPU64CN10N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 569pF @ 50V
FET Feature -
Power Dissipation (Max) 44W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

IPU64CN10N G Documents

IPU64CN10N G, IPU64CN10N G Datasheet (Total Pages: 10, Size: 781.54 KB)
IPU64CN10N G Datasheet CoverIPU64CN10N G Datasheet Page 2IPU64CN10N G Datasheet Page 3IPU64CN10N G Datasheet Page 4IPU64CN10N G Datasheet Page 5IPU64CN10N G Datasheet Page 6IPU64CN10N G Datasheet Page 7IPU64CN10N G Datasheet Page 8IPU64CN10N G Datasheet Page 9IPU64CN10N G Datasheet Page 10

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