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IPU80R3K3P7AKMA1


Part Number IPU80R3K3P7AKMA1
Zouser Part # IPU80R3K3P7AKMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 1.9A TO251-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPU80R3K3P7AKMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock2,153 - More on Order
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IPU80R3K3P7AKMA1 Specifications

Part Number IPU80R3K3P7AKMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ P7
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 5.8nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 120pF @ 500V
FET Feature -
Power Dissipation (Max) 18W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA

IPU80R3K3P7AKMA1 Documents

IPU80R3K3P7AKMA1, IPU80R3K3P7AKMA1 Datasheet (Total Pages: 13, Size: 1,225.06 KB)
IPU80R3K3P7AKMA1 Datasheet CoverIPU80R3K3P7AKMA1 Datasheet Page 2IPU80R3K3P7AKMA1 Datasheet Page 3IPU80R3K3P7AKMA1 Datasheet Page 4IPU80R3K3P7AKMA1 Datasheet Page 5IPU80R3K3P7AKMA1 Datasheet Page 6IPU80R3K3P7AKMA1 Datasheet Page 7IPU80R3K3P7AKMA1 Datasheet Page 8IPU80R3K3P7AKMA1 Datasheet Page 9IPU80R3K3P7AKMA1 Datasheet Page 10IPU80R3K3P7AKMA1 Datasheet Page 11IPU80R3K3P7AKMA1 Datasheet Page 12IPU80R3K3P7AKMA1 Datasheet Page 13

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