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IRF1902PBF


Part Number IRF1902PBF
Zouser Part # IRF1902PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 20V 4.2A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF1902PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock409 - More on Order
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IRF1902PBF Specifications

Part Number IRF1902PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

IRF1902PBF Documents

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