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IRF200B211
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IRF200B211


Part Number IRF200B211
Zouser Part # IRF200B211
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 12A TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IRF200B211 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock3,841 - More on Order
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IRF200B211 Specifications

Part Number IRF200B211
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®, StrongIRFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 170mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4.9V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 50V
FET Feature -
Power Dissipation (Max) 80W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRF200B211 Documents

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