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IRF5305L


Part Number IRF5305L
Zouser Part # IRF5305L
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 55V 31A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF5305L PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock339 - More on Order
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Lead-TimeTo be Confirmed
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IRF5305L Specifications

Part Number IRF5305L
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IRF5305L Documents

IRF5305L, IRF5305L Datasheet (Total Pages: 11, Size: 176.48 KB)
IRF5305L Datasheet CoverIRF5305L Datasheet Page 2IRF5305L Datasheet Page 3IRF5305L Datasheet Page 4IRF5305L Datasheet Page 5IRF5305L Datasheet Page 6IRF5305L Datasheet Page 7IRF5305L Datasheet Page 8IRF5305L Datasheet Page 9IRF5305L Datasheet Page 10IRF5305L Datasheet Page 11

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