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IRF6603TR1


Part Number IRF6603TR1
Zouser Part # IRF6603TR1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 27A DIRECTFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6603TR1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock232 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IRF6603TR1 Specifications

Part Number IRF6603TR1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 92A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72nC @ 4.5V
Vgs (Max) +20V, -12V
Input Capacitance (Ciss) (Max) @ Vds 6590pF @ 15V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT

IRF6603TR1 Documents

IRF6603TR1, IRF6603TR1 Datasheet (Total Pages: 11, Size: 204.78 KB)
IRF6603TR1 Datasheet CoverIRF6603TR1 Datasheet Page 2IRF6603TR1 Datasheet Page 3IRF6603TR1 Datasheet Page 4IRF6603TR1 Datasheet Page 5IRF6603TR1 Datasheet Page 6IRF6603TR1 Datasheet Page 7IRF6603TR1 Datasheet Page 8IRF6603TR1 Datasheet Page 9IRF6603TR1 Datasheet Page 10IRF6603TR1 Datasheet Page 11

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