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IRF6612TR1PBF


Part Number IRF6612TR1PBF
Zouser Part # IRF6612TR1PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 24A DIRECTFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6612TR1PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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IRF6612TR1PBF Specifications

Part Number IRF6612TR1PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 136A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3970pF @ 15V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX

IRF6612TR1PBF Documents

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