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IRF6629TR1PBF


Part Number IRF6629TR1PBF
Zouser Part # IRF6629TR1PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 29A DIRECTFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6629TR1PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock443 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IRF6629TR1PBF Specifications

Part Number IRF6629TR1PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 29A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 51nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4260pF @ 13V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 100W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX

IRF6629TR1PBF Documents

IRF6629TR1PBF, IRF6629TR1PBF Datasheet (Total Pages: 9, Size: 227.85 KB)
IRF6629TRPBF Datasheet CoverIRF6629TRPBF Datasheet Page 2IRF6629TRPBF Datasheet Page 3IRF6629TRPBF Datasheet Page 4IRF6629TRPBF Datasheet Page 5IRF6629TRPBF Datasheet Page 6IRF6629TRPBF Datasheet Page 7IRF6629TRPBF Datasheet Page 8IRF6629TRPBF Datasheet Page 9

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