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IRF6665TR1PBF


Part Number IRF6665TR1PBF
Zouser Part # IRF6665TR1PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 4.2A DIRECTFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6665TR1PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock479 - More on Order
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Lead-TimeTo be Confirmed
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IRF6665TR1PBF Specifications

Part Number IRF6665TR1PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 62mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 530pF @ 25V
FET Feature -
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ SH
Package / Case DirectFET™ Isometric SH

IRF6665TR1PBF Documents

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