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IRF6668TR1


Part Number IRF6668TR1
Zouser Part # IRF6668TR1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 55A DIRECTFET-MZ
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6668TR1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock447 - More on Order
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Lead-TimeTo be Confirmed
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IRF6668TR1 Specifications

Part Number IRF6668TR1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 25V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MZ
Package / Case DirectFET™ Isometric MZ

IRF6668TR1 Documents

IRF6668TR1, IRF6668TR1 Datasheet (Total Pages: 10, Size: 259.96 KB)
IRF6668TR1 Datasheet CoverIRF6668TR1 Datasheet Page 2IRF6668TR1 Datasheet Page 3IRF6668TR1 Datasheet Page 4IRF6668TR1 Datasheet Page 5IRF6668TR1 Datasheet Page 6IRF6668TR1 Datasheet Page 7IRF6668TR1 Datasheet Page 8IRF6668TR1 Datasheet Page 9IRF6668TR1 Datasheet Page 10

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