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IRF6709S2TR1PBF


Part Number IRF6709S2TR1PBF
Zouser Part # IRF6709S2TR1PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 25V 12A DIRECTFET-S1
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF6709S2TR1PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock368 - More on Order
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IRF6709S2TR1PBF Specifications

Part Number IRF6709S2TR1PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 13V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 21W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET S1
Package / Case DirectFET™ Isometric S1

IRF6709S2TR1PBF Documents

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