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IRF8113GTRPBF


Part Number IRF8113GTRPBF
Zouser Part # IRF8113GTRPBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 17.2A 8-SOIC
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF8113GTRPBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock648 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IRF8113GTRPBF Specifications

Part Number IRF8113GTRPBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.6mOhm @ 17.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2910pF @ 15V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)

IRF8113GTRPBF Documents

IRF8113GTRPBF, IRF8113GTRPBF Datasheet (Total Pages: 10, Size: 286.25 KB)
IRF8113GPBF Datasheet CoverIRF8113GPBF Datasheet Page 2IRF8113GPBF Datasheet Page 3IRF8113GPBF Datasheet Page 4IRF8113GPBF Datasheet Page 5IRF8113GPBF Datasheet Page 6IRF8113GPBF Datasheet Page 7IRF8113GPBF Datasheet Page 8IRF8113GPBF Datasheet Page 9IRF8113GPBF Datasheet Page 10

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