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IRF8306MTR1PBF


Part Number IRF8306MTR1PBF
Zouser Part # IRF8306MTR1PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 23A DIRECTFET
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRF8306MTR1PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock398 - More on Order
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IRF8306MTR1PBF Specifications

Part Number IRF8306MTR1PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 23A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 4.5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4110pF @ 15V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 2.1W (Ta), 75W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MX
Package / Case DirectFET™ Isometric MX

IRF8306MTR1PBF Documents

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