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IRFB31N20DPBF


Part Number IRFB31N20DPBF
Zouser Part # IRFB31N20DPBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 31A TO-220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IRFB31N20DPBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock3,097 - More on Order
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IRFB31N20DPBF Specifications

Part Number IRFB31N20DPBF
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB31N20DPBF Documents

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