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IRFB3607GPBF


Part Number IRFB3607GPBF
Zouser Part # IRFB3607GPBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 75V 80A TO220AB
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFB3607GPBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock245 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
Minimum1

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IRFB3607GPBF Specifications

Part Number IRFB3607GPBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
FET Feature -
Power Dissipation (Max) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFB3607GPBF Documents

IRFB3607GPBF, IRFB3607GPBF Datasheet (Total Pages: 8, Size: 288.39 KB)
IRFB3607GPBF Datasheet CoverIRFB3607GPBF Datasheet Page 2IRFB3607GPBF Datasheet Page 3IRFB3607GPBF Datasheet Page 4IRFB3607GPBF Datasheet Page 5IRFB3607GPBF Datasheet Page 6IRFB3607GPBF Datasheet Page 7IRFB3607GPBF Datasheet Page 8

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