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IRFBE30


Part Number IRFBE30
Zouser Part # IRFBE30
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 4.1A TO-220AB
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFBE30 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock412 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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IRFBE30 Specifications

Part Number IRFBE30
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IRFBE30 Documents

IRFBE30, IRFBE30 Datasheet (Total Pages: 9, Size: 1,594.73 KB)
IRFBE30 Datasheet CoverIRFBE30 Datasheet Page 2IRFBE30 Datasheet Page 3IRFBE30 Datasheet Page 4IRFBE30 Datasheet Page 5IRFBE30 Datasheet Page 6IRFBE30 Datasheet Page 7IRFBE30 Datasheet Page 8IRFBE30 Datasheet Page 9

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