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IRFBE30L


Part Number IRFBE30L
Zouser Part # IRFBE30L
Manufacturer Vishay Siliconix
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 4.1A TO-262
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFBE30L PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock434 - More on Order
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Lead-TimeCan Ship Immediately
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IRFBE30L Specifications

Part Number IRFBE30L
Brand Vishay Siliconix
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Vishay Siliconix
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IRFBE30L Documents

IRFBE30L, IRFBE30L Datasheet (Total Pages: 11, Size: 507.75 KB)
IRFBE30S Datasheet CoverIRFBE30S Datasheet Page 2IRFBE30S Datasheet Page 3IRFBE30S Datasheet Page 4IRFBE30S Datasheet Page 5IRFBE30S Datasheet Page 6IRFBE30S Datasheet Page 7IRFBE30S Datasheet Page 8IRFBE30S Datasheet Page 9IRFBE30S Datasheet Page 10IRFBE30S Datasheet Page 11

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