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IRFH8318TR2PBF


Part Number IRFH8318TR2PBF
Zouser Part # IRFH8318TR2PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 21A 5X6 PQFN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFH8318TR2PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock442 - More on Order
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Lead-TimeTo be Confirmed
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IRFH8318TR2PBF Specifications

Part Number IRFH8318TR2PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3180pF @ 10V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 59W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (5x6)
Package / Case 8-PowerTDFN

IRFH8318TR2PBF Documents

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