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IRFHM830DTR2PBF


Part Number IRFHM830DTR2PBF
Zouser Part # IRFHM830DTR2PBF
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 30V 20A PQFN
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRFHM830DTR2PBF PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock613 - More on Order
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IRFHM830DTR2PBF Specifications

Part Number IRFHM830DTR2PBF
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (3x3)
Package / Case 8-VQFN Exposed Pad

IRFHM830DTR2PBF Documents

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