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IRL2910STRL


Part Number IRL2910STRL
Zouser Part # IRL2910STRL
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 55A D2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRL2910STRL PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock381 - More on Order
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Lead-TimeTo be Confirmed
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IRL2910STRL Specifications

Part Number IRL2910STRL
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 29A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 140nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3700pF @ 25V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRL2910STRL Documents

IRL2910STRL, IRL2910STRL Datasheet (Total Pages: 11, Size: 338.21 KB)
IRL2910STRL Datasheet CoverIRL2910STRL Datasheet Page 2IRL2910STRL Datasheet Page 3IRL2910STRL Datasheet Page 4IRL2910STRL Datasheet Page 5IRL2910STRL Datasheet Page 6IRL2910STRL Datasheet Page 7IRL2910STRL Datasheet Page 8IRL2910STRL Datasheet Page 9IRL2910STRL Datasheet Page 10IRL2910STRL Datasheet Page 11

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