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IRLW610ATM
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IRLW610ATM


Part Number IRLW610ATM
Zouser Part # IRLW610ATM
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 200V 3.3A I2PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IRLW610ATM PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock624 - More on Order
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Lead-TimeTo be Confirmed
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IRLW610ATM Specifications

Part Number IRLW610ATM
Brand ON Semiconductor
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer ON Semiconductor
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.65A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IRLW610ATM Documents

IRLW610ATM, IRLW610ATM Datasheet (Total Pages: 7, Size: 236.05 KB)
IRLW610ATM Datasheet CoverIRLW610ATM Datasheet Page 2IRLW610ATM Datasheet Page 3IRLW610ATM Datasheet Page 4IRLW610ATM Datasheet Page 5IRLW610ATM Datasheet Page 6IRLW610ATM Datasheet Page 7

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