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ISP12DP06NMXTSA1


Part Number ISP12DP06NMXTSA1
Zouser Part # ISP12DP06NMXTSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V SOT223-4
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models ISP12DP06NMXTSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock220 - More on Order
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ISP12DP06NMXTSA1 Specifications

Part Number ISP12DP06NMXTSA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id 4V @ 520µA
Gate Charge (Qg) (Max) @ Vgs 20.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 30V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 4.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-SOT223-4
Package / Case TO-261-4, TO-261AA

ISP12DP06NMXTSA1 Documents

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