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IXFN26N100P


Part Number IXFN26N100P
Zouser Part # IXFN26N100P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 23A SOT-227B
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXFN26N100P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock184 - More on Order
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IXFN26N100P Specifications

Part Number IXFN26N100P
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series Polar™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 390mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 11900pF @ 25V
FET Feature -
Power Dissipation (Max) 595W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

IXFN26N100P Documents

IXFN26N100P, IXFN26N100P Datasheet (Total Pages: 4, Size: 110.04 KB)
IXFN26N100P Datasheet CoverIXFN26N100P Datasheet Page 2IXFN26N100P Datasheet Page 3IXFN26N100P Datasheet Page 4

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