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IXFN360N10T
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IXFN360N10T


Part Number IXFN360N10T
Zouser Part # IXFN360N10T
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 360A SOT-227B
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXFN360N10T PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,842 - More on Order
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IXFN360N10T Specifications

Part Number IXFN360N10T
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 180A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 505nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 36000pF @ 25V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

IXFN360N10T Documents

IXFN360N10T, IXFN360N10T Datasheet (Total Pages: 5, Size: 160.86 KB)
IXFN360N10T Datasheet CoverIXFN360N10T Datasheet Page 2IXFN360N10T Datasheet Page 3IXFN360N10T Datasheet Page 4IXFN360N10T Datasheet Page 5

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