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IXFR32N100P


Part Number IXFR32N100P
Zouser Part # IXFR32N100P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 18A ISOPLUS247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXFR32N100P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock590 - More on Order
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IXFR32N100P Specifications

Part Number IXFR32N100P
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™, PolarP2™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 340mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 225nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 14200pF @ 25V
FET Feature -
Power Dissipation (Max) 320W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case ISOPLUS247™

IXFR32N100P Documents

IXFR32N100P, IXFR32N100P Datasheet (Total Pages: 4, Size: 107.95 KB)
IXFR32N100P Datasheet CoverIXFR32N100P Datasheet Page 2IXFR32N100P Datasheet Page 3IXFR32N100P Datasheet Page 4

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