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IXFT12N100Q
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IXFT12N100Q


Part Number IXFT12N100Q
Zouser Part # IXFT12N100Q
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 12A TO268
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXFT12N100Q PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock223 - More on Order
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Lead-TimeCan Ship Immediately
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IXFT12N100Q Specifications

Part Number IXFT12N100Q
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

IXFT12N100Q Documents

IXFT12N100Q, IXFT12N100Q Datasheet (Total Pages: 4, Size: 145.11 KB)
IXFT12N100Q Datasheet CoverIXFT12N100Q Datasheet Page 2IXFT12N100Q Datasheet Page 3IXFT12N100Q Datasheet Page 4

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