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IXFV12N120P


Part Number IXFV12N120P
Zouser Part # IXFV12N120P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1200V 12A PLUS220
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXFV12N120P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock478 - More on Order
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Lead-TimeTo be Confirmed
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IXFV12N120P Specifications

Part Number IXFV12N120P
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™, PolarP2™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1200V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5400pF @ 25V
FET Feature -
Power Dissipation (Max) 543W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS220
Package / Case TO-220-3, Short Tab

IXFV12N120P Documents

IXFV12N120P, IXFV12N120P Datasheet (Total Pages: 4, Size: 174.43 KB)
IXFV12N120PS Datasheet CoverIXFV12N120PS Datasheet Page 2IXFV12N120PS Datasheet Page 3IXFV12N120PS Datasheet Page 4

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