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IXTD4N80P-3J


Part Number IXTD4N80P-3J
Zouser Part # IXTD4N80P-3J
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXTD4N80P-3J PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock606 - More on Order
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IXTD4N80P-3J Specifications

Part Number IXTD4N80P-3J
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series PolarHV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 14.2nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die

IXTD4N80P-3J Documents

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