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IXTI10N60P


Part Number IXTI10N60P
Zouser Part # IXTI10N60P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 600V 10A I2-PAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IXTI10N60P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock217 - More on Order
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Lead-TimeTo be Confirmed
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IXTI10N60P Specifications

Part Number IXTI10N60P
Brand IXYS
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series PolarHV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1610pF @ 25V
FET Feature -
Power Dissipation (Max) 200W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262 (I2PAK)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IXTI10N60P Documents

IXTI10N60P, IXTI10N60P Datasheet (Total Pages: 4, Size: 241.26 KB)
IXTI10N60P Datasheet CoverIXTI10N60P Datasheet Page 2IXTI10N60P Datasheet Page 3IXTI10N60P Datasheet Page 4

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