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IXTM12N100
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IXTM12N100


Part Number IXTM12N100
Zouser Part # IXTM12N100
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description POWER MOSFET TO-3
Lifecycle Last Time Buy
RoHS No RoHS Information
EDA/CAD Models IXTM12N100 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock250 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
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IXTM12N100 Specifications

Part Number IXTM12N100
Brand IXYS
Lifecycle Last Time Buy
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series GigaMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA
Package / Case TO-204AA, TO-3

IXTM12N100 Documents

IXTM12N100, IXTM12N100 Datasheet (Total Pages: 4, Size: 614.36 KB)
IXTM12N100 Datasheet CoverIXTM12N100 Datasheet Page 2IXTM12N100 Datasheet Page 3IXTM12N100 Datasheet Page 4

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