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IXTM35N30
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IXTM35N30


Part Number IXTM35N30
Zouser Part # IXTM35N30
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description POWER MOSFET TO-3
Lifecycle Last Time Buy
RoHS No RoHS Information
EDA/CAD Models IXTM35N30 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock521 - More on Order
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Lead-TimeTo be Confirmed
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IXTM35N30 Specifications

Part Number IXTM35N30
Brand IXYS
Lifecycle Last Time Buy
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series GigaMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 220nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AE
Package / Case TO-204AE

IXTM35N30 Documents

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