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IXTM67N10
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IXTM67N10


Part Number IXTM67N10
Zouser Part # IXTM67N10
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description POWER MOSFET TO-3
Lifecycle Last Time Buy
RoHS No RoHS Information
EDA/CAD Models IXTM67N10 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock464 - More on Order
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IXTM67N10 Specifications

Part Number IXTM67N10
Brand IXYS
Lifecycle Last Time Buy
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series GigaMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 33.5A, 10V
Vgs(th) (Max) @ Id 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs 260nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AE
Package / Case TO-204AE

IXTM67N10 Documents

IXTM67N10, IXTM67N10 Datasheet (Total Pages: 4, Size: 1,183.31 KB)
IXTM67N10 Datasheet CoverIXTM67N10 Datasheet Page 2IXTM67N10 Datasheet Page 3IXTM67N10 Datasheet Page 4

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