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IXTN120P20T


Part Number IXTN120P20T
Zouser Part # IXTN120P20T
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 200V 106A SOT-227
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTN120P20T PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock500 - More on Order
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Lead-TimeTo be Confirmed
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IXTN120P20T Specifications

Part Number IXTN120P20T
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series TrenchP™
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 740nC @ 10V
Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 73000pF @ 25V
FET Feature -
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

IXTN120P20T Documents

IXTN120P20T, IXTN120P20T Datasheet (Total Pages: 6, Size: 182.26 KB)
IXTN120P20T Datasheet CoverIXTN120P20T Datasheet Page 2IXTN120P20T Datasheet Page 3IXTN120P20T Datasheet Page 4IXTN120P20T Datasheet Page 5IXTN120P20T Datasheet Page 6

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