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IXTN200N10T


Part Number IXTN200N10T
Zouser Part # IXTN200N10T
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 200A SOT-227
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTN200N10T PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock247 - More on Order
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IXTN200N10T Specifications

Part Number IXTN200N10T
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series TrenchMV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
FET Feature -
Power Dissipation (Max) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B
Package / Case SOT-227-4, miniBLOC

IXTN200N10T Documents

IXTN200N10T, IXTN200N10T Datasheet (Total Pages: 5, Size: 168.48 KB)
IXTN200N10T Datasheet CoverIXTN200N10T Datasheet Page 2IXTN200N10T Datasheet Page 3IXTN200N10T Datasheet Page 4IXTN200N10T Datasheet Page 5

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