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IXTP6N100D2


Part Number IXTP6N100D2
Zouser Part # IXTP6N100D2
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 1000V 6A TO220AB
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTP6N100D2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock327 - More on Order
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Lead-TimeTo be Confirmed
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IXTP6N100D2 Specifications

Part Number IXTP6N100D2
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 95nC @ 5V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 25V
FET Feature Depletion Mode
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3

IXTP6N100D2 Documents

IXTP6N100D2, IXTP6N100D2 Datasheet (Total Pages: 5, Size: 165.03 KB)
IXTP6N100D2 Datasheet CoverIXTP6N100D2 Datasheet Page 2IXTP6N100D2 Datasheet Page 3IXTP6N100D2 Datasheet Page 4IXTP6N100D2 Datasheet Page 5

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