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IXTQ200N10T


Part Number IXTQ200N10T
Zouser Part # IXTQ200N10T
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 200A TO-3P
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTQ200N10T PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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In Stock426 - More on Order
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IXTQ200N10T Specifications

Part Number IXTQ200N10T
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series TrenchMV™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 9400pF @ 25V
FET Feature -
Power Dissipation (Max) 550W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P
Package / Case TO-3P-3, SC-65-3

IXTQ200N10T Documents

IXTQ200N10T, IXTQ200N10T Datasheet (Total Pages: 5, Size: 169.87 KB)
IXTQ200N10T Datasheet CoverIXTQ200N10T Datasheet Page 2IXTQ200N10T Datasheet Page 3IXTQ200N10T Datasheet Page 4IXTQ200N10T Datasheet Page 5

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