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IXTR200N10P


Part Number IXTR200N10P
Zouser Part # IXTR200N10P
Manufacturer IXYS
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 120A ISOPLUS247
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IXTR200N10P PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 26 - Dec 1 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock259 - More on Order
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IXTR200N10P Specifications

Part Number IXTR200N10P
Brand IXYS
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer IXYS
Series HiPerFET™, PolarP2™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 235nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7600pF @ 25V
FET Feature -
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package ISOPLUS247™
Package / Case ISOPLUS247™

IXTR200N10P Documents

IXTR200N10P, IXTR200N10P Datasheet (Total Pages: 5, Size: 151.63 KB)
IXTR200N10P Datasheet CoverIXTR200N10P Datasheet Page 2IXTR200N10P Datasheet Page 3IXTR200N10P Datasheet Page 4IXTR200N10P Datasheet Page 5

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