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MJD253-1G
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MJD253-1G


Part Number MJD253-1G
Zouser Part # MJD253-1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS PNP 100V 4A IPAK
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MJD253-1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock1,883 - More on Order
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MJD253-1G Specifications

Part Number MJD253-1G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Power - Max 1.4W
Frequency - Transition 40MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK

MJD253-1G Documents

MJD253-1G, MJD253-1G Datasheet (Total Pages: 10, Size: 196.8 KB)
MJD253-001 Datasheet CoverMJD253-001 Datasheet Page 2MJD253-001 Datasheet Page 3MJD253-001 Datasheet Page 4MJD253-001 Datasheet Page 5MJD253-001 Datasheet Page 6MJD253-001 Datasheet Page 7MJD253-001 Datasheet Page 8MJD253-001 Datasheet Page 9MJD253-001 Datasheet Page 10

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