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MJE800G
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MJE800G


Part Number MJE800G
Zouser Part # MJE800G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 60V 4A TO225AA
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MJE800G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock3,167 - More on Order
Quote LimitNo Limit
Lead-TimeCan Ship Immediately
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MJE800G Specifications

Part Number MJE800G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max) 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 1.5A, 3V
Power - Max 40W
Frequency - Transition -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Supplier Device Package TO-225AA

MJE800G Documents

MJE800G, MJE800G Datasheet (Total Pages: 6, Size: 134.41 KB)
MJE703 Datasheet CoverMJE703 Datasheet Page 2MJE703 Datasheet Page 3MJE703 Datasheet Page 4MJE703 Datasheet Page 5MJE703 Datasheet Page 6

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