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MUN5132DW1T1G


Part Number MUN5132DW1T1G
Zouser Part # MUN5132DW1T1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2PNP PREBIAS 0.25W SC88
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MUN5132DW1T1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock488 - More on Order
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Lead-TimeTo be Confirmed
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MUN5132DW1T1G Specifications

Part Number MUN5132DW1T1G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Series -
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 4.7kOhms
Resistor - Emitter Base (R2) 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

MUN5132DW1T1G Documents

MUN5132DW1T1G, MUN5132DW1T1G Datasheet (Total Pages: 8, Size: 123.74 KB)
NSBA143EDXV6T1G Datasheet CoverNSBA143EDXV6T1G Datasheet Page 2NSBA143EDXV6T1G Datasheet Page 3NSBA143EDXV6T1G Datasheet Page 4NSBA143EDXV6T1G Datasheet Page 5NSBA143EDXV6T1G Datasheet Page 6NSBA143EDXV6T1G Datasheet Page 7NSBA143EDXV6T1G Datasheet Page 8

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