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MUN5235DW1T1G
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MUN5235DW1T1G


Part Number MUN5235DW1T1G
Zouser Part # MUN5235DW1T1G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Arrays, Pre-Biased
Description TRANS 2NPN PREBIAS 0.25W SOT363
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models MUN5235DW1T1G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock24,830 - More on Order
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MUN5235DW1T1G Specifications

Part Number MUN5235DW1T1G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer ON Semiconductor
Series -
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 2.2kOhms
Resistor - Emitter Base (R2) 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363

MUN5235DW1T1G Documents

MUN5235DW1T1G, MUN5235DW1T1G Datasheet (Total Pages: 8, Size: 130.85 KB)
NSBC123JDXV6T1G Datasheet CoverNSBC123JDXV6T1G Datasheet Page 2NSBC123JDXV6T1G Datasheet Page 3NSBC123JDXV6T1G Datasheet Page 4NSBC123JDXV6T1G Datasheet Page 5NSBC123JDXV6T1G Datasheet Page 6NSBC123JDXV6T1G Datasheet Page 7NSBC123JDXV6T1G Datasheet Page 8

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