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NJVNJD35N04G


Part Number NJVNJD35N04G
Zouser Part # NJVNJD35N04G
Manufacturer ON Semiconductor
Category SemiconductorsTransistorsBipolar (BJT) - Single
Description TRANS NPN DARL 350V 4A DPAK-4
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NJVNJD35N04G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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ISO9001 ISO14001 RoHS Compliant IAF CNAS UKAS

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In Stock517 - More on Order
Quote LimitNo Limit
Lead-TimeTo be Confirmed
Minimum1

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NJVNJD35N04G Specifications

Part Number NJVNJD35N04G
Brand ON Semiconductor
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory Bipolar (BJT) - Single
Manufacturer ON Semiconductor
Series -
Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 350V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max) 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 2A, 2V
Power - Max 45W
Frequency - Transition 90MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK

NJVNJD35N04G Documents

NJVNJD35N04G, NJVNJD35N04G Datasheet (Total Pages: 4, Size: 122.6 KB)
NJVNJD35N04G Datasheet CoverNJVNJD35N04G Datasheet Page 2NJVNJD35N04G Datasheet Page 3NJVNJD35N04G Datasheet Page 4

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