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NP100P06PDG-E1-AY


Part Number NP100P06PDG-E1-AY
Zouser Part # NP100P06PDG-E1-AY
Manufacturer Renesas Electronics America
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET P-CH 60V 100A TO-263
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models NP100P06PDG-E1-AY PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 20 - Dec 25 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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NP100P06PDG-E1-AY Specifications

Part Number NP100P06PDG-E1-AY
Brand Renesas Electronics America
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Renesas Electronics America
Series -
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 10V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 200W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NP100P06PDG-E1-AY Documents

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