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NP109N055PUJ-E1B-AY


Part Number NP109N055PUJ-E1B-AY
Zouser Part # NP109N055PUJ-E1B-AY
Manufacturer Renesas Electronics America
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V MP-25ZP/TO-263
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models NP109N055PUJ-E1B-AY PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*

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NP109N055PUJ-E1B-AY Specifications

Part Number NP109N055PUJ-E1B-AY
Brand Renesas Electronics America
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Renesas Electronics America
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 110A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10350pF @ 25V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 220W (Tc)
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

NP109N055PUJ-E1B-AY Documents

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